Publication:
High power and linearity performances of gallium nitride HEMT devices on sapphire substrate
Date
| dc.contributor.author | Werquin, W. | |
| dc.contributor.author | Gaquiere, C. | |
| dc.contributor.author | Guhel, Y. | |
| dc.contributor.author | Vellas, N. | |
| dc.contributor.author | Theron, D. | |
| dc.contributor.author | Boudart, B. | |
| dc.contributor.author | Hoel, V. | |
| dc.contributor.author | Germain, Marianne | |
| dc.contributor.author | de Jaeger, J.C. | |
| dc.contributor.author | Delage, S. | |
| dc.date.accessioned | 2021-10-16T07:07:29Z | |
| dc.date.available | 2021-10-16T07:07:29Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/11554 | |
| dc.source.beginpage | 46 | |
| dc.source.endpage | 47 | |
| dc.source.issue | 1 | |
| dc.source.journal | Electronics Letters | |
| dc.source.volume | 41 | |
| dc.title | High power and linearity performances of gallium nitride HEMT devices on sapphire substrate | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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