Publication:

The Flash Memory for the nodes to come: material issues from a device perspective

Date

2009
Proceedings Paper
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dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKittl, Jorge
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorRothschild, Aude
dc.contributor.authorBlomme, Pieter
dc.contributor.authorWellekens, Dirk
dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-17T22:31:04Z
dc.date.available2021-10-17T22:31:04Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15385
dc.source.beginpage649
dc.source.conferenceSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage668
dc.title

The Flash Memory for the nodes to come: material issues from a device perspective

dc.typeProceedings paper
dspace.entity.typePublication
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