Publication:

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

Date

2012
Journal article
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-3513-6058
cris.virtualsource.department2d7dd015-fa43-4fbb-89fc-68f144075506
cris.virtualsource.orcid2d7dd015-fa43-4fbb-89fc-68f144075506
dc.contributor.authorShimura, Y.
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorNakatsuka, O.
dc.contributor.authorVincent, Benjamin
dc.contributor.authorGencarelli, Federica
dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorJensen, A.
dc.contributor.authorPetersen, D. H.
dc.contributor.authorZaima, S.
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-20T16:04:26Z
dc.date.available2021-10-20T16:04:26Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21502
dc.source.beginpage3206
dc.source.endpage3210
dc.source.issue8
dc.source.journalThin Solid Films
dc.source.volume520
dc.title

In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates

dc.typeJournal article
dspace.entity.typePublication
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