Publication:

Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition

Date

2012
Meeting abstract
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dc.contributor.authorRampelberg, Geert
dc.contributor.authorSchaekers, Marc
dc.contributor.authorMartens, Koen
dc.contributor.authorXie, Qi
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorDe Schutter, Bob
dc.contributor.authorBlasco, Nicolas
dc.contributor.authorKittl, Jorge
dc.contributor.authorDetavernier, Christophe
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorXie, Qi
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.date.accessioned2021-10-20T15:07:11Z
dc.date.available2021-10-20T15:07:11Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21378
dc.source.beginpageO7-02
dc.source.conferenceMaterials for Advanced Metallization - MAM
dc.source.conferencedate11/03/2012
dc.source.conferencelocationGrenoble France
dc.title

Semiconductor-metal transition in thin VO2 films deposited by ozone based atomic layer deposition

dc.typeMeeting abstract
dspace.entity.typePublication
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