Publication:

Selective wet etching of HF-based layers

Date

2004
Proceedings Paper
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dc.contributor.authorClaes, Martine
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBoutkabout, Hakim
dc.contributor.authorWitters, Thomas
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorRohr, Erika
dc.contributor.authorCoenegrachts, Bart
dc.contributor.authorVertommen, Johan
dc.contributor.authorRichard, Olivier
dc.contributor.authorLindsay, Richard
dc.contributor.authorBoullart, Werner
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCoenegrachts, Bart
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-15T12:52:59Z
dc.date.available2021-10-15T12:52:59Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8689
dc.source.beginpage165
dc.source.conferencePhysics and Technology of High-k Gate Dielectrics II
dc.source.conferencedate12/10/2003
dc.source.conferencelocationOrlando, FL USA
dc.source.endpage174
dc.title

Selective wet etching of HF-based layers

dc.typeProceedings paper
dspace.entity.typePublication
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