Publication:
Yttrium Doped Hf<sub>0</sub>.<sub>5</sub>Zr<sub>0</sub>.<sub>5</sub>O<sub>2</sub> Based Ferroelectric Capacitor Exhibiting Fatigue Free (>10<sub>12</sub> Cycles), Long Retention, and Imprint Immune Performance at 4 K
| dc.contributor.author | Agarwal, A. | |
| dc.contributor.author | Walke, A. M. | |
| dc.contributor.author | Ronchi, N. | |
| dc.contributor.author | Popovici, M. I. | |
| dc.contributor.author | Ma, W. C. Y. | |
| dc.contributor.author | Su, C. J. | |
| dc.contributor.author | Kao, K. H. | |
| dc.contributor.author | Van Houdt, Jan | |
| dc.contributor.imecauthor | Walke, A. M. | |
| dc.contributor.imecauthor | Ronchi, N. | |
| dc.contributor.imecauthor | Popovici, M. I. | |
| dc.contributor.imecauthor | Van Houdt, Jan | |
| dc.contributor.orcidimec | Van Houdt, Jan::0000-0003-1381-6925 | |
| dc.date.accessioned | 2025-07-14T03:56:25Z | |
| dc.date.available | 2025-07-14T03:56:25Z | |
| dc.date.issued | 2025-JUL | |
| dc.description.wosFundingText | This work was supported in part by the National Science and Technology Council, Taiwan, under Grant NSTC 112-2222-E-006-010-MY2, Grant 113-2628-E-006-015-MY4, and Grant 113-2218-E-006-019-MBK. The review of this letter was arranged by Editor M. H. Park. | |
| dc.identifier.doi | 10.1109/LED.2025.3562798 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45901 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 1095 | |
| dc.source.endpage | 1098 | |
| dc.source.issue | 7 | |
| dc.source.journal | IEEE ELECTRON DEVICE LETTERS | |
| dc.source.numberofpages | 4 | |
| dc.source.volume | 46 | |
| dc.subject.keywords | FILMS | |
| dc.title | Yttrium Doped Hf0.5Zr0.5O2 Based Ferroelectric Capacitor Exhibiting Fatigue Free (>1012 Cycles), Long Retention, and Imprint Immune Performance at 4 K | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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