Publication:

Which defect breaks down gate oxides?

Date

 
dc.contributor.authorZhang, W.D.
dc.contributor.authorZhang, J.F.
dc.contributor.authorZhao, C.Z.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.date.accessioned2021-10-15T07:58:12Z
dc.date.available2021-10-15T07:58:12Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8436
dc.source.conferenceSemiconductor Interface Specialists Conference (SISC)
dc.source.conferencedate4/12/2003
dc.source.conferencelocationWashington USA
dc.title

Which defect breaks down gate oxides?

dc.typeOral presentation
dspace.entity.typePublication
Files
Publication available in collections: