Publication:

Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features

Date

2020
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorEneman, Geert
dc.contributor.authorMertens, Hans
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorSimoen, Eddy
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-29T07:02:46Z
dc.date.available2021-10-29T07:02:46Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/36231
dc.identifier.urlhttps://doi.org/10.1149/MA2020-01151037mtgabs
dc.source.beginpage1037
dc.source.conferenceSymposium D01 (Dielectrics for Nanosystems 8 - Materials Science, Processing, Reliability, and Manufacturing) - 237th ECS Spring
dc.source.conferencedate10/05/2020
dc.source.conferencelocationBristol UK
dc.title

Gate-All-Around nanosheet field-effect transistors for advanced logic and memory applications: integration and device features

dc.typeMeeting abstract
dspace.entity.typePublication
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