Publication:
Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures
Date
| dc.contributor.author | Ragnarsson, Lars-Ake | |
| dc.contributor.author | Bojarczuk, N.A. | |
| dc.contributor.author | Copel, M. | |
| dc.contributor.author | Gusev, E.P. | |
| dc.contributor.author | Karasinski, J. | |
| dc.contributor.author | Guha, S. | |
| dc.contributor.imecauthor | Ragnarsson, Lars-Ake | |
| dc.contributor.orcidimec | Ragnarsson, Lars-Ake::0000-0003-1057-8140 | |
| dc.date.accessioned | 2021-10-15T06:19:14Z | |
| dc.date.available | 2021-10-15T06:19:14Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/8056 | |
| dc.source.beginpage | 3912 | |
| dc.source.endpage | 3919 | |
| dc.source.issue | 7 | |
| dc.source.journal | Journal of Applied Physics | |
| dc.source.volume | 93 | |
| dc.title | Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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