Publication:

Low-current operation of novel TiN\Gd-Al-O\Hf RRAM cells with large memory window

Date

2015
Presentation
Simple item page Full metadata Statistics
 
dc.contributor.authorChen, Michael
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-22T18:40:26Z
dc.date.available2021-10-22T18:40:26Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25066
dc.source.conferenceE-MRS Spring Meeting Symposium AA: Non-Volatile Memories: Materials, Nanostructures and Integration Approaches
dc.source.conferencedate11/05/2015
dc.source.conferencelocationLille France
dc.title

Low-current operation of novel TiN\Gd-Al-O\Hf RRAM cells with large memory window

dc.typeOral presentation
dspace.entity.typePublication
Files
Publication available in collections:
Presentations