Publication:

Does high-NA EUV require tighter mask roughness specifications: a simulation study

Date

 
dc.contributor.authorJonckheere, Rik
dc.contributor.authorMelvin, Lawrence, III
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.accessioned2023-06-02T10:19:20Z
dc.date.available2023-03-22T03:40:58Z
dc.date.available2023-06-02T10:19:20Z
dc.date.issued2022
dc.identifier.doi10.1117/12.2643247
dc.identifier.eisbn978-1-5106-5640-6
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41330
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.conferenceInternational Conference on Extreme Ultraviolet Lithography
dc.source.conferencedateSEP 26-29, 2022
dc.source.conferencelocationMonterey
dc.source.journalProceedings of SPIE
dc.source.numberofpages8
dc.source.volume12292
dc.title

Does high-NA EUV require tighter mask roughness specifications: a simulation study

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections: