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Substrates and gate dielectrics: the materials issue for sub-22nm CMOS scaling
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Substrates and gate dielectrics: the materials issue for sub-22nm CMOS scaling
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Date
2010-04
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Caymax, Matty
;
Bellenger, Florence
;
Brammertz, Guy
;
Dekoster, Johan
;
Delabie, Annelies
;
Loo, Roger
;
Merckling, Clement
;
Nguyen, Duy
;
Nyns, Laura
;
Sioncke, Sonja
;
Vincent, Benjamin
;
Wang, Gang
;
Vandervorst, Wilfried
;
Heyns, Marc
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Views
1879
since deposited on 2021-10-18
1
last month
1
last week
Acq. date: 2025-12-16
Citations