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On the use of SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGe HBTs

Date

2007
Journal article
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dc.contributor.authorChoi, Li Jen
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorPiontek, Andreas
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorKunnen, Eddy
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorvan Noort, Wibo
dc.contributor.authorHijzen, Erwin
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-16T15:18:01Z
dc.date.available2021-10-16T15:18:01Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11863
dc.source.beginpage270
dc.source.endpage272
dc.source.issue4
dc.source.journalIEEE Electron Device Letters
dc.source.volume28
dc.title

On the use of SiGe spike in the emitter to improve the fTxBVCEO product of high-speed SiGe HBTs

dc.typeJournal article
dspace.entity.typePublication
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