Publication:

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

Date

2022-04-14
Journal article
https://doi.org/10.1109/TED.2022.3159611
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dc.contributor.authorGonzalez, Benito
dc.contributor.authorLazaro, Antonio
dc.contributor.authorRodriguez, Raul
dc.contributor.imecauthorRodriguez, Raul
dc.contributor.orcidext0000-0001-6864-9736
dc.contributor.orcidext0000-0003-3160-5777
dc.contributor.orcidimecRodriguez, Raul::0000-0002-4457-8942
dc.date.accessioned2022-04-26T08:52:56Z
dc.date.available2022-04-14T02:09:40Z
dc.date.available2022-04-25T09:41:23Z
dc.date.available2022-04-26T08:52:56Z
dc.date.embargo9999-12-31
dc.date.issued2022-04-14
dc.description.wosFundingTextThis work was supported by the Ministerio de Ciencia, Innovacion y Universidades, Spain, under Project NextIOT-RTI2018-096019-B-C31.
dc.identifier.doi10.1109/TED.2022.3159611
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39615
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2307
dc.source.endpage2312
dc.source.issue5
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume69
dc.subject.disciplineApplied physics
dc.title

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

dc.typeJournal article
dspace.entity.typePublication
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