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The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface
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The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface
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Date
1999
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kim, Young-Chang
;
Baklanov, Mikhaïl
;
Conard, Thierry
;
Vanhaelemeersch, Serge
;
Vandervorst, Wilfried
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1897
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Acq. date: 2025-12-15
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Metrics
Views
1897
since deposited on 2021-10-06
2
last month
1
last week
Acq. date: 2025-12-15
Citations