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The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface
Publication:
The optimization of the cleaning process to remove residual bonds of SiC and Si-F after fluorocarbon plasma etch on the silicon surface
Date
1999
Proceedings Paper
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3520.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kim, Young-Chang
;
Baklanov, Mikhaïl
;
Conard, Thierry
;
Vanhaelemeersch, Serge
;
Vandervorst, Wilfried
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Abstract
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1894
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations
Metrics
Views
1894
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations