Publication:

On the importance of source/drain series resistance in implant-free SiGe quantum well FETs

Date

2011
Proceedings Paper
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dc.contributor.authorKrom, Raymond
dc.contributor.authorHellings, Geert
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorEneman, Geert
dc.contributor.authorWaldron, Niamh
dc.contributor.authorHeyns, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.accessioned2021-10-19T14:57:28Z
dc.date.available2021-10-19T14:57:28Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19198
dc.source.beginpage7
dc.source.conferenceSilicon Nanoelectronics Workshop
dc.source.conferencedate12/06/2011
dc.source.conferencelocationKyoto Japan
dc.source.endpage8
dc.title

On the importance of source/drain series resistance in implant-free SiGe quantum well FETs

dc.typeProceedings paper
dspace.entity.typePublication
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