Publication:
Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics
Date
| dc.contributor.author | Veloso, Anabela | |
| dc.contributor.author | Yu, HongYu | |
| dc.contributor.author | Chang, S.Z. | |
| dc.contributor.author | Adelmann, Chris | |
| dc.contributor.author | Onsia, Bart | |
| dc.contributor.author | Brus, Stephan | |
| dc.contributor.imecauthor | Veloso, Anabela | |
| dc.contributor.imecauthor | Onsia, Bart | |
| dc.contributor.imecauthor | Brus, Stephan | |
| dc.date.accessioned | 2021-10-16T21:18:00Z | |
| dc.date.available | 2021-10-16T21:18:00Z | |
| dc.date.issued | 2007 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13158 | |
| dc.source.beginpage | 980 | |
| dc.source.endpage | 983 | |
| dc.source.issue | 11 | |
| dc.source.journal | IEEE Electron Device Letters | |
| dc.source.volume | 28 | |
| dc.title | Achieving Low-VT Ni-FUSI CMOS by ultra-thin Dy2O3 capping of hafnium silicate dielectrics | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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