Publication:

GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

Date

Loading...
Thumbnail Image

Abstract

Description

Metrics

Views

1886 since deposited on 2021-10-20
2last month
Acq. date: 2025-12-09

Citations

Metrics

Views

1886 since deposited on 2021-10-20
2last month
Acq. date: 2025-12-09

Citations