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GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
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GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics
Date
2012
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Galeti, M.
;
Rodrigues, M.
;
Martino, J.A.
;
Collaert, Nadine
;
Simoen, Eddy
;
Claeys, Cor
Journal
Solid-State Electronics
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1882
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations
Metrics
Views
1882
since deposited on 2021-10-20
Acq. date: 2025-10-23
Citations