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Maximization of active As doping (selective) epitaxial Si and SiGe layers

Date

2004-10
Proceedings Paper
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dc.contributor.authorLoo, Roger
dc.contributor.authorBajolet, Philippe
dc.contributor.authorBauer, Matthias
dc.contributor.authorMaes, Jan-Willem
dc.contributor.authorCaymax, Matty
dc.contributor.authorArena, Chantal
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-15T14:31:50Z
dc.date.available2021-10-15T14:31:50Z
dc.date.embargo9999-12-31
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9217
dc.source.beginpage1123
dc.source.conferenceSiGe: Materials, Processing, and Devices. Proceedings of the 1st International Symposium
dc.source.conferencedate3/10/2004
dc.source.conferencelocationHonolulu, HI Hawaii
dc.source.endpage1133
dc.title

Maximization of active As doping (selective) epitaxial Si and SiGe layers

dc.typeProceedings paper
dspace.entity.typePublication
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