Publication:

Integration of SiGe in the p-MOS fin based FETs

Date

2015-05
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorKubicek, Stefan
dc.contributor.authorMannaert, Geert
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T19:42:44Z
dc.date.available2021-10-22T19:42:44Z
dc.date.issued2015-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25386
dc.source.beginpage13
dc.source.conference9th International Conference on Silicon Epitaxy and Heterostructures - ICSI9
dc.source.conferencedate17/05/2015
dc.source.conferencelocationMontreal Canada
dc.source.endpage14
dc.title

Integration of SiGe in the p-MOS fin based FETs

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions