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Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
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Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain
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Date
2010
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Amat, Esteve
;
Rodriguez, Rosana
;
Bargallo Gonzalez, Mireia
;
Martin Martinez, Javier
;
Nafria, Montse
;
Aymerich, Xavier
;
Machkaoutsan, Vladimir
;
Bauer, M.
;
Verheyen,
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1912
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Acq. date: 2026-02-25
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Views
1912
since deposited on 2021-10-18
1
last month
Acq. date: 2026-02-25
Citations