Publication:

Effect of remote oxygen scavenging on electrical properties of Ge-based metal-oxide-semiconductor capacitors

Date

2017
Journal article
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dc.contributor.authorFadida, Sivan
dc.contributor.authorNyns, Laura
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorEizenberg, Moshe
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-24T04:39:45Z
dc.date.available2021-10-24T04:39:45Z
dc.date.issued2017
dc.identifier.issn0361-5235
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28321
dc.identifier.urlhttp://link.springer.com/article/10.1007/s11664-016-4841-6
dc.source.beginpage386
dc.source.endpage392
dc.source.issue1
dc.source.journalJournal of Electronic Materials
dc.source.volume46
dc.title

Effect of remote oxygen scavenging on electrical properties of Ge-based metal-oxide-semiconductor capacitors

dc.typeJournal article
dspace.entity.typePublication
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