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Understanding and prediction of EWF modulation induced by various dopants in the gate stack for a gate-first integration scheme

Date

2008
Proceedings Paper
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dc.contributor.authorWang, Xin Peng
dc.contributor.authorYu, HongYu
dc.contributor.authorYeo, Y.-C.
dc.contributor.authorLi, M.-F.
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorCho, Hag-Ju
dc.contributor.authorKubicek, Stefan
dc.contributor.authorWouters, Dirk
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorBiesemans, Serge
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-17T12:42:47Z
dc.date.available2021-10-17T12:42:47Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14775
dc.source.beginpage162
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate17/06/2008
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage163
dc.title

Understanding and prediction of EWF modulation induced by various dopants in the gate stack for a gate-first integration scheme

dc.typeProceedings paper
dspace.entity.typePublication
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