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Harsh laser annealing techniques for improved crystallization of a-Si(Ge) layers deposited at 210C

Date

2009
Proceedings Paper
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dc.contributor.authorEl Rifai, Joumana
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorAbdel Aziz, Ahmed
dc.contributor.authorPuers, Bob
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorSedky, Sherif
dc.contributor.imecauthorPuers, Bob
dc.contributor.imecauthorVan Hoof, Chris
dc.date.accessioned2021-10-17T22:04:13Z
dc.date.available2021-10-17T22:04:13Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15265
dc.source.beginpage63
dc.source.conferenceAnnual Workshop on Semiconductor Advances for Future Electronics - SAFE
dc.source.conferencedate26/11/2009
dc.source.conferencelocationEindhoven The Netherlands
dc.source.endpage66
dc.title

Harsh laser annealing techniques for improved crystallization of a-Si(Ge) layers deposited at 210C

dc.typeProceedings paper
dspace.entity.typePublication
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