Publication:

GaN-on-Si power field effect transistors

Date

2010
Proceedings Paper
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dc.contributor.authorGermain, Marianne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDas, Jo
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorVisalli, Domenica
dc.contributor.authorMarcon, Denis
dc.contributor.authorGeens, Karen
dc.contributor.authorViaene, John
dc.contributor.authorSijmus, Bram
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCartuyvels, Rudi
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorCartuyvels, Rudi
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-18T16:31:04Z
dc.date.available2021-10-18T16:31:04Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17140
dc.source.beginpage171
dc.source.conferenceInternational Symposium on VLSI Technology Systems and Applications - VLSI-TSA
dc.source.conferencedate26/04/2010
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage172
dc.title

GaN-on-Si power field effect transistors

dc.typeProceedings paper
dspace.entity.typePublication
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