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Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers
Publication:
Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers
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Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Comrie, C.M.
;
Mtshali, C.B.
;
Sechogela, P.T.
;
Santos, N.M.
;
Van Stiphout, K.
;
Loo, Roger
;
Vantomme, Andre
Journal
Journal of Applied Physics
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1928
since deposited on 2021-10-23
Acq. date: 2026-07-19
Citations
Statistics
Views
1928
since deposited on 2021-10-23
Acq. date: 2026-07-19
Citations