Publication:

Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

Date

2016
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorHu, Jie
dc.contributor.authorStoffels, Steve
dc.contributor.authorLenci, Silvia
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T11:23:10Z
dc.date.available2021-10-23T11:23:10Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26749
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7528735/?arnumber=7528735
dc.source.beginpage1
dc.source.conferenceCompound Semiconductor Week - CSW
dc.source.conferencedate26/06/2016
dc.source.conferencelocationToyama Japan
dc.title

Impact of AlGaN barrier recess on the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes with gated edge termination

dc.typeMeeting abstract
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions