Publication:

Defect free trench isolation for high voltage bipolar application on SOI wafer

Date

1998
Proceedings Paper
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dc.contributor.authorYindeepol, W.
dc.contributor.authorBashir, R.
dc.contributor.authorMcGregor, J. M.
dc.contributor.authorBrown, K. C.
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorDe Santis, J.
dc.contributor.authorAhmed, A.
dc.contributor.imecauthorDe Wolf, Ingrid
dc.date.accessioned2021-10-01T09:51:09Z
dc.date.available2021-10-01T09:51:09Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3165
dc.source.beginpage151
dc.source.conferenceProceedings IEEE International SOI Conference
dc.source.conferencedate5/10/1998
dc.source.conferencelocationStuart, FL USA
dc.source.endpage152
dc.title

Defect free trench isolation for high voltage bipolar application on SOI wafer

dc.typeProceedings paper
dspace.entity.typePublication
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