Publication:

Germanium MOSFETs with CeO2/HfO2/TiN gate stacks

Date

2007
Journal article
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dc.contributor.authorNicholas, Gareth
dc.contributor.authorBrunco, David
dc.contributor.authordimoulas, A.
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorBellenger, Florence
dc.contributor.authorHoussa, Michel
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorPanayiotatos, Y.
dc.contributor.authorSotiropoulos, A.
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-16T18:10:23Z
dc.date.available2021-10-16T18:10:23Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12619
dc.source.beginpage1425
dc.source.endpage1430
dc.source.issue6
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume54
dc.title

Germanium MOSFETs with CeO2/HfO2/TiN gate stacks

dc.typeJournal article
dspace.entity.typePublication
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