Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices

dc.contributor.author	Agopian, Paula G.D.
dc.contributor.author	Carmo, G.J.
dc.contributor.author	Martino, J.A.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Collaert, Nadine
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.date.accessioned	2021-10-28T20:09:11Z
dc.date.available	2021-10-28T20:09:11Z
dc.date.issued	2020
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/34599
dc.identifier.url	https://doi.org/10.1149/09705.0053ecst
dc.source.beginpage	53
dc.source.conference	237th ECS Spring Meeting - Symposium Advanced CMOS-compatible Semiconductor Devices 19
dc.source.conferencedate	10/05/2020
dc.source.conferencelocation	Bristol UK
dc.source.endpage	58
dc.title	Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices
dc.type	Proceedings paper
dspace.entity.type	Publication
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