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Postcycling LRS retention analysis in HfO2/HF RRAM 1T1R device

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dc.contributor.authorChen, Yangyin
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorClima, Sergiu
dc.contributor.authorGoux, Ludovic
dc.contributor.authorFantini, Andrea
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorWouters, Dirk
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-21T06:57:01Z
dc.date.available2021-10-21T06:57:01Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22134
dc.identifier.urlhttp://ieeexplore.ieee.org/document/6490333/
dc.source.beginpage626
dc.source.endpage628
dc.source.issue5
dc.source.journalIEEE Electron Device Letters
dc.source.volume34
dc.title

Postcycling LRS retention analysis in HfO2/HF RRAM 1T1R device

dc.typeJournal article
dspace.entity.typePublication
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