Publication:

Full charge incorporation in ab initio simulations of two-dimensional semiconductor-based devices

Date

2023
Journal article
https://doi.org/10.1007/s10825-023-02055-3
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dc.contributor.authorDuflou, Rutger
dc.contributor.authorHoussa, Michel
dc.contributor.authorAfzalian, Aryan
dc.contributor.imecauthorDuflou, Rutger
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.orcidimecDuflou, Rutger::0000-0002-0357-1293
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.date.accessioned2024-02-23T17:40:03Z
dc.date.available2023-06-19T20:36:47Z
dc.date.available2023-06-27T14:31:56Z
dc.date.available2024-02-23T17:40:03Z
dc.date.embargo2023-06-08
dc.date.issued2023
dc.description.wosFundingTextThis research was funded by the FWO as part of the PhD fellowship 1100321N.
dc.identifier.doi10.1007/s10825-023-02055-3
dc.identifier.issn1569-8025
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41756
dc.publisherSPRINGER
dc.source.beginpage1
dc.source.endpage13
dc.source.issue4
dc.source.journalJOURNAL OF COMPUTATIONAL ELECTRONICS
dc.source.numberofpages13
dc.source.volume22
dc.subject.keywordsBULK
dc.title

Full charge incorporation in ab initio simulations of two-dimensional semiconductor-based devices

dc.typeJournal article
dspace.entity.typePublication
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