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Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially depleted SOI MOSFETs
Publication:
Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially depleted SOI MOSFETs
Date
2004
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lukyanchikova, N.
;
Garbar, N.
;
Smolanka, A.
;
Simoen, Eddy
;
Mercha, Abdelkarim
;
Claeys, Cor
Journal
Solid-State Electronics
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1920
since deposited on 2021-10-15
Acq. date: 2025-10-27
Citations
Metrics
Views
1920
since deposited on 2021-10-15
Acq. date: 2025-10-27
Citations