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On the difference in threshold voltage dependence on channel length for boron and indium channel nMOS transistors

Date

1999
Proceedings Paper
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dc.contributor.authorKubicek, Stefan
dc.contributor.authorJeong-Ho, Lyu
dc.contributor.authorvan Meer, Hans
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-10-06T11:34:34Z
dc.date.available2021-10-06T11:34:34Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3577
dc.source.beginpage404
dc.source.conferenceESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium.
dc.source.endpage407
dc.title

On the difference in threshold voltage dependence on channel length for boron and indium channel nMOS transistors

dc.typeProceedings paper
dspace.entity.typePublication
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