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On the impact of indium and boron on the Reversed Narrow-Channel Effects (RNCE) in BULK and SOI MOSFETs

Date

1999
Proceedings Paper
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dc.contributor.authorvan Meer, Hans
dc.contributor.authorLyu, Jeong-ho
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-10-14T11:48:23Z
dc.date.available2021-10-14T11:48:23Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3938
dc.source.beginpage31
dc.source.conference1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Tevhnical Papers; 8-10 June 1999; Tai
dc.source.conferencelocation
dc.source.endpage34
dc.title

On the impact of indium and boron on the Reversed Narrow-Channel Effects (RNCE) in BULK and SOI MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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