Silicon-Doped GeS2 for Arsenic-Free Ovonic Threshold Switch Selector Device Applications

Abstract

Arsenic‐free ovonic threshold switch (OTS) materials are important for enabling sustainable selector devices in high‐density crossbar memory arrays. Guided by ab initio design, we investigate Si‐doped GeS2 as a promising candidate, offering improved thermal stability and reduced leakage compared to alternative arsenic‐free materials. Thin films with up to 10% Si content were deposited by cosputtering and demonstrated thermal stability above 500°C. Device electrical characterization revealed good I OFF performance comparable to reference SiGeAsSe devices. These results position Si‐doped GeS2 as a viable candidate for environmentally friendly, arsenic‐free OTS selectors, with further optimization needed to address endurance limitations.