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Growth and characterization of tensile-strained Ge layers on strain relaxed Ge1-xSnx buffer layers
Publication:
Growth and characterization of tensile-strained Ge layers on strain relaxed Ge1-xSnx buffer layers
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Date
2007
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nakatsuka, O
;
Takeuchi, Shotaro
;
Sakai, A
;
Ogawa, M
;
Zaima, S
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1909
since deposited on 2021-10-16
Acq. date: 2025-12-13
Citations
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Views
1909
since deposited on 2021-10-16
Acq. date: 2025-12-13
Citations