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Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes

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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKaniava, Arvydas
dc.contributor.authorSimoen, Eddy
dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorClaeys, Cor
dc.contributor.authorJohlander, B.
dc.contributor.authorHarboe-Sörensen, R.
dc.contributor.authorAdams, L.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-29T12:51:14Z
dc.date.available2021-09-29T12:51:14Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/424
dc.source.beginpage479
dc.source.endpage486
dc.source.issue3
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.volume41
dc.title

Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes

dc.typeJournal article
dspace.entity.typePublication
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