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Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology

Date

2009
Journal article
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dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorMagnus, Wim
dc.contributor.authorSoree, Bart
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T01:53:37Z
dc.date.available2021-10-18T01:53:37Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16049
dc.source.beginpage53702
dc.source.issue5
dc.source.journalJournal of Applied Physics
dc.source.volume106
dc.title

Ballistic current in metal-oxide-semiconductor field-effect transistors: the role of device topology

dc.typeJournal article
dspace.entity.typePublication
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