Publication:

High quality GdSi1.7 layers formed by high dose channeled implantation

Date

1996
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorPattyn, Hugo
dc.contributor.authorLangouche, G.
dc.contributor.authorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorPattyn, Hugo
dc.contributor.imecauthorBender, Hugo
dc.date.accessioned2021-09-29T15:55:39Z
dc.date.available2021-09-29T15:55:39Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1670
dc.source.beginpage535
dc.source.conferenceAdvanced Metallization for Future ULSI
dc.source.conferencedate8/04/1996
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage540
dc.title

High quality GdSi1.7 layers formed by high dose channeled implantation

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
1642.pdf
Size:
298.1 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions