Publication:

A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon

Date

 
dc.contributor.authorEverts, Jordi
dc.contributor.authorDas, Jo
dc.contributor.authorVan Den Keybus, Jeroen
dc.contributor.authorGenoe, Jan
dc.contributor.authorGermain, Marianne
dc.contributor.authorDriesen, Johan
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorDriesen, Johan
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.date.accessioned2021-10-18T16:17:53Z
dc.date.available2021-10-18T16:17:53Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17089
dc.source.beginpage3296
dc.source.conferenceIEEE Energy Conversion Congress and Exposition - ECCE
dc.source.conferencedate12/09/2010
dc.source.conferencelocationAtlanta, GA USA
dc.source.endpage3302
dc.title

A high-efficiency, high-frequency boost converter using enhancement mode GaN DHFETs on silicon

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
23699.pdf
Size:
1.33 MB
Format:
Adobe Portable Document Format
Publication available in collections: