Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs

dc.contributor.author	Collaert, Nadine
dc.contributor.author	De Meyer, Kristin
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.date.accessioned	2021-10-06T10:49:12Z
dc.date.available	2021-10-06T10:49:12Z
dc.date.embargo	9999-12-31
dc.date.issued	1999
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/3307
dc.source.beginpage	2173
dc.source.endpage	2180
dc.source.issue	12
dc.source.journal	Solid-State Electronics
dc.source.volume	43
dc.title	Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs
dc.type	Journal article
dspace.entity.type	Publication
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