Poly- silicon etch with diluted ammonia: application to replacement gate integration scheme

dc.contributor.author	Sebaai, Farid
dc.contributor.author	del Agua Borniquel, Jose Ignacio
dc.contributor.author	Vos, Rita
dc.contributor.author	Absil, Philippe
dc.contributor.author	Chiarella, Thomas
dc.contributor.author	Vrancken, Christa
dc.contributor.author	Boelen, Pieter
dc.contributor.author	Baiya, Evans
dc.contributor.imecauthor	Sebaai, Farid
dc.contributor.imecauthor	del Agua Borniquel, Jose Ignacio
dc.contributor.imecauthor	Vos, Rita
dc.contributor.imecauthor	Absil, Philippe
dc.contributor.imecauthor	Chiarella, Thomas
dc.contributor.imecauthor	Vrancken, Christa
dc.contributor.orcidimec	Chiarella, Thomas::0000-0002-6155-9030
dc.date.accessioned	2021-10-18T02:47:51Z
dc.date.available	2021-10-18T02:47:51Z
dc.date.issued	2009
dc.identifier.issn	1662-9779
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/16186
dc.identifier.url	http://www.scientific.net
dc.source.beginpage	207
dc.source.endpage	210
dc.source.journal	Solid State Phenomena
dc.source.volume	145-146
dc.title	Poly- silicon etch with diluted ammonia: application to replacement gate integration scheme
dc.type	Journal article
dspace.entity.type	Publication
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