Publication:

Influence of nitride passivation on the performance of InAlAs/InGaAs HEMTs

Date

1994
Proceedings Paper
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dc.contributor.authorBaeyens, Yves
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVan Rossum, Marc
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorNauwelaers, Bart
dc.date.accessioned2021-09-29T12:39:43Z
dc.date.available2021-09-29T12:39:43Z
dc.date.embargo9999-12-31
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24
dc.source.beginpage803
dc.source.conference24th European Solid State Device Research Conference - ESSDERC
dc.source.conferencedate11/09/1994
dc.source.conferencelocationEdinburgh UK
dc.source.endpage807
dc.title

Influence of nitride passivation on the performance of InAlAs/InGaAs HEMTs

dc.typeProceedings paper
dspace.entity.typePublication
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