Publication:
Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by electron beam induced current
Date
| dc.contributor.author | Grazzi, C. | |
| dc.contributor.author | Albrecht, M. | |
| dc.contributor.author | Strunk, H. P. | |
| dc.contributor.author | Bougrioua, Zahia | |
| dc.contributor.author | Moerman, Ingrid | |
| dc.contributor.imecauthor | Moerman, Ingrid | |
| dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
| dc.date.accessioned | 2021-10-14T16:59:07Z | |
| dc.date.available | 2021-10-14T16:59:07Z | |
| dc.date.issued | 2001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5320 | |
| dc.source.conference | GADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology; | |
| dc.source.conferencelocation | ||
| dc.title | Minority carrier diffusion lengths in silicon doped gallium nitride thin films measured by electron beam induced current | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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