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Stochastic modeling of the impact of random dopants on hot-carrier degradation in n-FinFETs
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Stochastic modeling of the impact of random dopants on hot-carrier degradation in n-FinFETs
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Date
2019
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Makarov, Alexander
;
Kaczer, Ben
;
Roussel, Philippe
;
Vaisman Chasin, Adrian
;
Grill, Alexander
;
Vandemaele, Michiel
;
Hellings, Geert
;
El-Sayed, Al-Moatasem
;
Grasser, Tibor
;
Linten, Dimitri
;
Tyaginov, Stanislav
Journal
IEEE Electron Device Letters
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1942
since deposited on 2021-10-27
Acq. date: 2025-12-13
Citations
Metrics
Views
1942
since deposited on 2021-10-27
Acq. date: 2025-12-13
Citations