Publication:

Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack

Date

2019
Proceedings Paper
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dc.contributor.authorZhao, Simeng E.
dc.contributor.authorBonaldo, Stefano
dc.contributor.authorWang, Pengfei
dc.contributor.authorZhang, En Xia
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGerardin, Simone
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorReed, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-28T00:50:35Z
dc.date.available2021-10-28T00:50:35Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34546
dc.source.conferenceRadiation Effects on Devices & ICs 2019 - RADECS
dc.source.conferencedate16/09/2019
dc.source.conferencelocationMontpellier France
dc.title

Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack

dc.typeProceedings paper
dspace.entity.typePublication
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