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Wafer shape based in-plane distortion predictions using superfast 4G metrology

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dc.contributor.authorVan Dijk, Leon
dc.contributor.authorMileham, Jeffrey
dc.contributor.authorMalakhovsky, Ilja
dc.contributor.authorLaidler, David
dc.contributor.authorDekkers, Harold
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAnberg, Doug
dc.contributor.authorOwen, David M.
dc.contributor.authorvan Haren, Richard
dc.contributor.imecauthorLaidler, David
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorvan Haren, Richard
dc.contributor.orcidimecLaidler, David::0000-0003-4055-3366
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-24T15:57:21Z
dc.date.available2021-10-24T15:57:21Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.doi10.1117/12.2257475
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29666
dc.source.beginpage101452L
dc.source.conferenceMetrology, Inspection, and Process Control for Microlithography XXXI,
dc.source.conferencedate31/01/2017
dc.source.conferencelocationSan Jose, CA USA
dc.title

Wafer shape based in-plane distortion predictions using superfast 4G metrology

dc.typeProceedings paper
dspace.entity.typePublication
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