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Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-Silicon Via Interconnects

Date

2012
Proceedings Paper
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dc.contributor.authorCivale, Yann
dc.contributor.authorArmini, Silvia
dc.contributor.authorPhilipsen, Harold
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorVelenis, Dimitrios
dc.contributor.authorCroes, Kristof
dc.contributor.authorHeylen, Nancy
dc.contributor.authorEl-Mekki, Zaid
dc.contributor.authorVandersmissen, Kevin
dc.contributor.authorBeyer, Gerald
dc.contributor.authorSwinnen, Bart
dc.contributor.authorBeyne, Eric
dc.contributor.imecauthorArmini, Silvia
dc.contributor.imecauthorPhilipsen, Harold
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorVelenis, Dimitrios
dc.contributor.imecauthorCroes, Kristof
dc.contributor.imecauthorHeylen, Nancy
dc.contributor.imecauthorEl-Mekki, Zaid
dc.contributor.imecauthorVandersmissen, Kevin
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorSwinnen, Bart
dc.contributor.imecauthorBeyne, Eric
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.contributor.orcidimecPhilipsen, Harold::0000-0002-5029-1104
dc.contributor.orcidimecCroes, Kristof::0000-0002-3955-0638
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.accessioned2021-10-20T10:18:37Z
dc.date.available2021-10-20T10:18:37Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20467
dc.source.conference62th Electronic Components and Technology Conference - ECTC
dc.source.conferencedate29/05/2012
dc.source.conferencelocationSan Diego, CA USA
dc.title

Enhanced barrier seed metallization for integration of high-density high aspect-ratio copper-filled 3D through-Silicon Via Interconnects

dc.typeProceedings paper
dspace.entity.typePublication
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