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Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Publication:
Highly scalable bulk FinFET devices with multi-VT options by conductive metal gate stack tuning for the 10-nm node and beyond
Date
2014
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ragnarsson, Lars-Ake
;
Chew, Soon Aik
;
Dekkers, Harold
;
Toledano Luque, Maria
;
Parvais, Bertrand
;
De Keersgieter, An
;
Van Ammel, Annemie
;
Schram, Tom
;
Yoshida, Naomi
;
Phatak, Anup
;
Han, Keping
;
Colombeau, Benjamin
;
Brand, Adam
;
Horiguchi, Naoto
;
Thean, Aaron
Journal
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since deposited on 2021-10-22
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1
since deposited on 2021-10-22
Acq. date: 2025-10-23
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2027
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations